| Autor: |
Cai, Xiaofan, Chen, Ruichang, Gao, Xu, Yuan, Meili, Hu, Haixia, Yin, Hang, Qu, Yuanyuan, Tan, Yang, Chen, Feng |
| Rok vydání: |
2024 |
| Předmět: |
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| Druh dokumentu: |
Working Paper |
| Popis: |
Recently, avalanche multiplication has been observed in TMDC-based FETs, enhancing sensor performance with high sensitivity. However, the high voltage required for operation can damage the FETs, making it crucial to reduce the breakdown voltage for effective sensing applications. Here, we demonstrate that the utilization of hopping transfer induced by high-density defects can effectively reduce the breakdown voltage in TMDCs FETs. By substituting oxygen atoms for sulfur atoms in a monolayer of MoS2, we create MoS2-xOx, with x carefully adjusted within the range of 0 to 0.51. Oxygen doping reduces the bandgap of TMDCs and enhances ion collision rates. Moreover, higher levels of oxygen doping (x > 0.41) in MoS2-xOx exhibit nearest-neighbor hopping behavior, leading to a significant enhancement in electron mobility. These improvements result in a decrease in the breakdown voltage of avalanche multiplication from 26.2 V to 12.6 V. Additionally, we propose avalanche multiplication in MoS2-xOx as an efficient sensing mechanism to overcome the limitations of gas sensing. The MoS2-xOx sensors display an ultra-high response to NO2 gas in the air, with a response of 5.8x103 % to NO2 gas of 50 ppb at room temperature, which is nearly two orders of magnitude higher than resistance-type gas detectors based on TMDCs. This work demonstrates that hopping transfer induced by high-density oxygen defects can effectively decrease the breakdown voltage of MoS2-xOx FETs, enhancing avalanche multiplication and serving as a promising mechanism for ultrasensitive gas detection. |
| Databáze: |
arXiv |
| Externí odkaz: |
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