| Autor: |
Melnikov, M. Yu., Smirnov, D. G., Shashkin, A. A., Huang, S. -H., Liu, C. W., Kravchenko, S. V. |
| Rok vydání: |
2024 |
| Předmět: |
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| Druh dokumentu: |
Working Paper |
| Popis: |
We find that the double-threshold voltage-current characteristics in the insulating regime in the ultra-clean two-valley two-dimensional electron system in SiGe/Si/SiGe quantum wells are promoted by perpendicular magnetic fields, persisting to an order of magnitude lower voltages and considerably higher electron densities compared to the zero-field case. This observation indicates the perpendicular-magnetic-field stabilization of the quantum electron solid. |
| Databáze: |
arXiv |
| Externí odkaz: |
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