Telecom light-emitting diodes based on nanoconfined self-assembled silicon-based color centers
| Autor: | Salomon, Andreas, Aberl, Johannes, Navarrete, Enrique Prado, Karaman, Merve, Gali, Ádám, Fromherz, Thomas, Brehm, Moritz |
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| Rok vydání: | 2024 |
| Předmět: | |
| Druh dokumentu: | Working Paper |
| Popis: | Silicon color centers (SiCCs) have recently emerged as potential building blocks for light emitters in Si photonics, quantum emitters with spin storage capabilities, and Si-based quantum repeaters. We have recently developed a non-invasive method to engineer carbon-related SiCCs confined to ultra-thin nanolayers within a pristine crystalline environment, which is of utmost importance for the photostability of SiCCs. Here, we demonstrate embedding these C-doping-based SiCCs into the only 9 nm wide intrinsic region of a p-i-n diode using the epitaxial self-assembly of color centers. We report electrically-pumped light emission with an exponential increase in the intensity as a function of the driving current until saturation. We associate this property with the shift of quasi-Fermi-level position upon electrical driving, which simultaneously improves the spectral homogeneity of the engineered SiCCs. Our study demonstrates the electrical control and driving of near-infrared emitters in high-quality silicon diodes, an essential milestone for advancing classical and quantum optoelectronics. Comment: Main text: 11 pages + 3 Figures & Supplementary material: 1 page and 1 Figure |
| Databáze: | arXiv |
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