Impact of ALD-Deposited Ultrathin Nitride Layers on Carrier Lifetimes and Photoluminescence Efficiency in CdTe/MgCdTe Double Heterostructures

Autor:	Abbasi, Haris Naeem, Qi, Xin, Ju, Zheng, Ma, Zhenqiang, Zhang, Yong-Hang
Rok vydání:	2024
Předmět:	Condensed Matter - Materials Science Physics - Applied Physics
Druh dokumentu:	Working Paper
Popis:	This work evaluates the passivation effectiveness of ultrathin nitride layers (SiNx, AlN, TiN) deposited via atomic layer deposition on CdTe/MgCdTe double heterostructures for solar cell applications. Time-resolved photoluminescence and photoluminescence measurements revealed enhanced carrier lifetimes and reduced surface recombination, indicating improved passivation effectiveness. These results underscore the potential of SiNx as a promising passivation material to improve the efficiency of CdTe solar cells. Comment: 16 pages, 4 figures
Databáze:	arXiv
Externí odkaz:	http://arxiv.org/abs/2408.10696 Zobrazit plný text záznamu View this record from Arxiv