| Autor: |
Babichev, Andrey, Pirogov, Evgeniy, Sobolev, Maksim, Blokhin, Sergey, Shernyakov, Yuri, Maximov, Mikhail, Lutetskiy, Andrey, Pikhtin, Nikita, Karachinsky, Leonid, Novikov, Innokenty, Egorov, Anton, Tian, Si-Cong, Bimberg, Dieter |
| Rok vydání: |
2024 |
| Předmět: |
|
| Druh dokumentu: |
Working Paper |
| Popis: |
A detailed experimental analysis of the impact of active region design on the performance of 1300 nm lasers based on InGaAs/InAlGaAs superlattices is presented. Three different types of superlattice active regions and waveguide layer compositions were grown. Using a superlattice allows to downshift the energy position of the miniband, as compared to thin InGaAs quantum wells, having the same composition, being beneficial for high-temperature operation. Very low internal loss (~6$cm^{-1}$), low transparency current density of ~500$ A/cm^2$, together with 46$ cm^{-1}$ modal gain and 53 % internal efficiency were observed for broad-area lasers with an active region based on a highly strained $In_{0.74}Ga_{0.26}As/In_{0.53}Al_{0.25}Ga_{0.22}As$ superlattice. Characteristic temperatures $T_0$ and $T_1$ were improved up to 76 K and 100 K, respectively. These data suggest that such superlattices have also the potential to much improve VCSEL properties at this wavelength. |
| Databáze: |
arXiv |
| Externí odkaz: |
|
