Exchange control in a MOS double quantum dot made using a 300 mm wafer process

Autor: Chittock-Wood, Jacob F., Leon, Ross C. C., Fogarty, Michael A., Murphy, Tara, Patomäki, Sofia M., Oakes, Giovanni A., von Horstig, Felix-Ekkehard, Johnson, Nathan, Jussot, Julien, Kubicek, Stefan, Govoreanu, Bogdan, Wise, David F., Gonzalez-Zalba, M. Fernando, Morton, John J. L.
Rok vydání: 2024
Předmět:
Druh dokumentu: Working Paper
Popis: Leveraging the advanced manufacturing capabilities of the semiconductor industry promises to help scale up silicon-based quantum processors by increasing yield, uniformity and integration. Recent studies of quantum dots fabricated on 300 mm wafer metal-oxide-semiconductor (MOS) processes have shown control and readout of individual spin qubits, yet quantum processors require two-qubit interactions to operate. Here, we use a 300 mm wafer MOS process customized for spin qubits and demonstrate coherent control of two electron spins using the spin-spin exchange interaction, forming the basis of an entangling gate such as $\sqrt{\text{SWAP}}$. We observe gate dephasing times of up to $T_2^{*}\approx500$ ns and a gate quality factor of 10. We further extend the coherence by up to an order of magnitude using an echo sequence. For readout, we introduce a dispersive readout technique, the radiofrequency electron cascade, that amplifies the signal while retaining the spin-projective nature of dispersive measurements. Our results demonstrate an industrial grade platform for two-qubit operations, alongside integration with dispersive sensing techniques.
Databáze: arXiv