Strained topological insulator spin-orbit torque random access memory (STI-SOTRAM) bit cell for energy-efficient Processing in Memory
| Autor: | Morshed, Md Golam, Vakili, Hamed, Sakib, Mohammad Nazmus, Ganguly, Samiran, Stan, Mircea R., Ghosh, Avik W. |
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| Rok vydání: | 2024 |
| Předmět: | |
| Druh dokumentu: | Working Paper |
| Popis: | We present a novel design of a strained topological insulator spin-orbit torque random access memory (STI-SOTRAM) bit cell comprising a piezoelectric/magnet (gating)/topological insulator (TI)/magnet (storage) heterostructure that leverages the TI's high charge-to-spin conversion efficiency coupled with the piezo-induced strain-based gating mechanism for low-power in-memory computing. The piezo-induced strain effectively modulates the conductivity of the topological surface state (TSS) by altering the gating magnet's magnetization from out-to-in-plane, facilitating the storage magnet's spin-orbit torque (SOT) switching. Through comprehensive coupled stochastic Landau-Lifshitz-Gilbert (LLG) simulations, we explore the device dynamics, anisotropy-stress phase space for switching, and write conditions and demonstrate a significant reduction in energy dissipation compared to conventional heavy metal (HM)-based SOT switching. Additionally, we project the energy consumption for in-memory Boolean operations (AND and OR). Our findings suggest the promise of the STI-SOTRAM for low-power, high-performance edge computing. Comment: 14 pages, 7 figures |
| Databáze: | arXiv |
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