| Autor: |
Chen, Moyu, Xie, Yongqin, Cheng, Bin, Yang, Zaizheng, Li, Xin-Zhi, Chen, Fanqiang, Li, Qiao, Xie, Jiao, Watanabe, Kenji, Taniguchi, Takashi, He, Wen-Yu, Wu, Menghao, Liang, Shi-Jun, Miao, Feng |
| Rok vydání: |
2024 |
| Předmět: |
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| Zdroj: |
Nature Nanotechnolgy (2024) |
| Druh dokumentu: |
Working Paper |
| DOI: |
10.1038/s41565-024-01698-y |
| Popis: |
Topologically protected edge state transport in quantum materials is dissipationless and features quantized Hall conductance, and shows great potential in highly fault-tolerant computing technologies. However, it remains elusive about how to develop topological edge state-based computing devices. Recently, exploration and understanding of interfacial ferroelectricity in various van der Waals heterostructure material systems have received widespread attention among the community of materials science and condensed matter physics3-11. Such ferroelectric polarization emergent at the vdW interface can coexist with other quantum states and thus provides an unprecedented opportunity to electrically switch the topological edge states of interest, which is of crucial significance to the fault-tolerant electronic device applications based on the topological edge states. Here, we report the selective and quasi-continuous ferroelectric switching of topological Chern insulator devices and demonstrate its promising application in noise-immune neuromorphic computing. We fabricate this ferroelectric Chern insulator device by encapsulating magic-angle twisted bilayer graphene with doubly-aligned h-BN layers, and observe the coexistence of the interfacial ferroelectricity and the topological Chern insulating states. This ferroelectricity exhibits an anisotropic dependence on the in-plane magnetic field. By using a VBG pulse with delicately controlled amplitude, we realize the nonvolatile switching between any pair of Chern insulating states and achieve 1280 distinguishable nonvolatile resistance levels on a single device. Furthermore, we demonstrate deterministic switching between two arbitrary levels among the record-high number of nonvolatile resistance levels. |
| Databáze: |
arXiv |
| Externí odkaz: |
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