Nanoscale ferroelectric programming of van der Waals heterostructures
Autor: | Yang, Dengyu, Cao, Qingrui, Akyuz, Erin, Hayden, John, Nordlander, Josh, Yu, Muqing, Ramachandran, Ranjani, Irvin, Patrick, Maria, Jon-Paul, Hunt, Benjamin M., Levy, Jeremy |
---|---|
Rok vydání: | 2024 |
Předmět: | |
Druh dokumentu: | Working Paper |
Popis: | The ability to create superlattices in van der Waals (vdW) heterostructures via moir\'e interference heralded a new era in the science and technology of two-dimensional materials. Through precise control of the twist angle, flat bands and strongly correlated phases have been engineered. The precise twisting of vdW layers is in some sense a bottom-up approach--a single parameter can dial in a wide range of periodic structures. Here, we describe a top-down approach to engineering nanoscale potentials in vdW layers using a buried programmable ferroelectric layer. Ultra-low-voltage electron beam lithography (ULV-EBL) is used to program ferroelectric domains in a ferroelectric Al_{1-x}B_{x}N thin film through a graphene/hexagonal boron nitride (hBN) heterostructure that is transferred on top. We demonstrate ferroelectric field effects by creating a lateral p-n junction, and demonstrate spatial resolution down to 35 nm, limited by the resolution of our scanned probe characterization methods. This innovative, resist-free patterning method is predicted to achieve 10 nm resolution and enable arbitrary programming of vdW layers, opening a pathway to create new phases that are inaccessible by moir\'e techniques. The ability to "paint" different phases of matter on a single vdW "canvas" provides a wealth of new electronic and photonic functionalities. Comment: 9 pages, 4 figures and supplemental material |
Databáze: | arXiv |
Externí odkaz: |