Ferroelectric AlBN Films by Molecular Beam Epitaxy

Autor:	Savant, Chandrashekhar, Gund, Ved, Nomoto, Kazuki, Maeda, Takuya, Jadhav, Shubham, Lee, Joongwon, Ramesh, Madhav, Kim, Eungkyun, Nguyen, Thai-Son, Chen, Yu-Hsin, Casamento, Joseph, Rana, Farhan, Lal, Amit, Huili, Xing, Jena, Debdeep
Rok vydání:	2024
Předmět:	Condensed Matter - Materials Science Condensed Matter - Mesoscale and Nanoscale Physics Condensed Matter - Superconductivity
Druh dokumentu:	Working Paper
DOI:	10.1063/5.0181217
Popis:	We report the properties of molecular beam epitaxy deposited AlBN thin films on a recently developed epitaxial nitride metal electrode Nb2N. While a control AlN thin film exhibits standard capacitive behavior, distinct ferroelectric switching is observed in the AlBN films with increasing Boron mole fraction. The measured remnant polarization Pr of 15 uC/cm2 and coercive field Ec of 1.45 MV/cm in these films are smaller than those recently reported on films deposited by sputtering, due to incomplete wake-up, limited by current leakage. Because AlBN preserves the ultrawide energy bandgap of AlN compared to other nitride hi-K dielectrics and ferroelectrics, and it can be epitaxially integrated with GaN and AlN semiconductors, its development will enable several opportunities for unique electronic, photonic, and memory devices. Comment: DOI: 10.1063/5.0181217
Databáze:	arXiv
Externí odkaz:	http://arxiv.org/abs/2407.09740 Zobrazit plný text záznamu View this record from Arxiv