Multiparameter admittance spectroscopy for investigating defects in MoS${_2}$ thin film MOSFETs
| Autor: | Reato, Eros, Esteki, Ardeshir, Ku, Benny, Wang, Zhenxing, Heuken, Michael, Lemme, Max C., Engström, Olof |
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| Rok vydání: | 2024 |
| Předmět: | |
| Druh dokumentu: | Working Paper |
| Popis: | A method for assessing the quality of electronic material properties of thin-film metal oxide semiconductor field-effect transistors (MOSFETs) is presented. By investigating samples with MOCVD-grown MoS${_2}$ channels exposed to atmospheric conditions, the existence of electron traps in MoS${_2}$ and at the interface between the gate insulator and the thin-film MoS${_2}$ are revealed. Differential conductance and capacitance data of the transistor channels are plotted as 3D surfaces on a base plane spanned by the measurement frequency versus the gate voltage. The existence of defects is confirmed by comparison with ideal results from a theoretical model. Comment: 24 pages |
| Databáze: | arXiv |
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