Spin relaxation of localized electrons in monolayer MoSe$_2$: importance of random effective magnetic fields
| Autor: | Yalcin, Eyüp, Kalitukha, Ina V., Akimov, Ilya A., Korenev, Vladimir L., Ken, Olga S., Puebla, Jorge, Otani, Yoshichika, Hutchings, Oscar M., Gillard, Daniel J., Tartakovskii, Alexander I., Bayer, Manfred |
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| Rok vydání: | 2024 |
| Předmět: | |
| Druh dokumentu: | Working Paper |
| Popis: | We study the Hanle and spin polarization recovery effects on resident electrons in a monolayer MoSe$_2$ on EuS. We demonstrate that localized electrons provide the main contribution to the spin dynamics signal at low temperatures below 15~K for small magnetic fields of only a few mT. The spin relaxation of these electrons is determined by random effective magnetic fields due to a contact spin interaction, namely the hyperfine interaction with the nuclei in MoSe$_2$ or the exchange interaction with the magnetic ions of the EuS film. From the magnetic field angular dependence of the spin polarization we evaluate the anisotropy of the intervalley electron $g$-factor and the spin relaxation time. The non-zero in-plane $g$-factor $|g_x|\approx 0.1$, the value of which is comparable to its dispersion, is attributed to randomly localized electrons in the MoSe$_2$ layer. Comment: 6 pages, 4 figures |
| Databáze: | arXiv |
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