Design of a Modular GaN-based Three-Phase Three-Level ANPC Inverter
| Autor: | Di Cataldo, Angelo, Eivazi, Hamed, Aiello, Giuseppe, Patti, Dario, Scelba, Giacomo, Cacciato, Mario, Gennaro, Francesco |
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| Rok vydání: | 2024 |
| Předmět: | |
| Druh dokumentu: | Working Paper |
| Popis: | This paper presents the design of an 800 V 11 kVA three-level three-phase active neutral point clamped inverter, utilizing 650 V gallium nitride enhancement-mode high-electron-mobility transistors, to evaluate its feasibility in electric traction systems. The modular approach of the presented power converter design is detailed discussed and the different printed circuit boards composing the power converter are presented, together with critical design issues. The paper includes the gate driver design, as well as the thermal analysis and parasitics extraction using ANSYS Q3D. Extractor. Comment: 6 pages, 9 figures, 15th International Conference ELEKTRO 2024. This work has been carried out in the framework of the ECSEL-JU Project GaN4AP (Gallium Nitride for Advanced Power Applications) - Grant Agreement No.101007310 |
| Databáze: | arXiv |
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