Electrical switching of chirality in rhombohedral graphene Chern insulators
| Autor: | Ding, Jing, Xiang, Hanxiao, Hua, Jiannan, Zhou, Wenqiang, Liu, Naitian, Zhang, Le, Xin, Na, Watanabe, Kenji, Taniguchi, Takashi, Zhu, Wei, Xu, Shuigang |
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| Rok vydání: | 2024 |
| Předmět: | |
| Druh dokumentu: | Working Paper |
| Popis: | A Chern insulator hosts topologically protected chiral edge currents with quantized conductance characterized by its Chern number. Switching the chirality of the Chern insulator, namely, the direction of the edge current, is highly challenging due to topologically forbidden backscattering but is of considerable importance for the design of topological devices. Nevertheless, this can be achieved by reversing the sign of the Chern number through a topological phase transition. Here, we report electrically switchable chirality in rhombohedral heptalayer graphene-based Chern insulators. The surface flat band and giant Berry curvature in rhombohedral multilayer graphene provide a highly tunable platform for engineering the topological states. By introducing moire superlattices in rhombohedral heptalayer graphene, we observed a cascade of topological phase transitions at quarter electron filling of a moire band. The Chern number can be continuously tuned from 0, -1, 1 to 2 by electric fields, manifesting as a large anomalous Hall effect and following Streda's formula. Sign reversal and the anomalous Hall effect also occurred at non-integer fillings, suggesting the possibility of electrically tunable topological phase transitions within the regime of fractional Chern insulators. Our work establishes rhombohedral heptalayer graphene moire superlattices as a versatile platform for topological engineering. The realization of switchable chirality enhances the potential application of chiral edge currents in topological circuit interconnects. Comment: 21 pages, 4 figures in main text |
| Databáze: | arXiv |
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