Insulator-to-Metal Transition and Anomalously Slow Hot Carrier Cooling in a Photo-doped Mott Insulator

Autor:	Choudhry, Usama, Zhang, Jin, Huang, Kewen, Low, Emma, Quan, Yujie, Shaheen, Basamat, Gnabasik, Ryan, Yan, Jiaqiang, Rubio, Angel, Burch, Kenneth S., Liao, Bolin
Rok vydání:	2024
Předmět:	Condensed Matter - Strongly Correlated Electrons Condensed Matter - Materials Science
Druh dokumentu:	Working Paper
Popis:	Photo-doped Mott insulators can exhibit novel photocarrier transport and relaxation dynamics and non-equilibrium phases. However, time-resolved real-space imaging of these processes are still lacking. Here, we use scanning ultrafast electron microscopy (SUEM) to directly visualize the spatial-temporal evolution of photoexcited species in a spin-orbit assisted Mott insulator {\alpha}-RuCl3. At low optical fluences, we observe extremely long hot photocarrier transport time over one nanosecond, almost an order of magnitude longer than any known values in conventional semiconductors. At higher optical fluences, we observe nonlinear features suggesting a photo-induced insulator-to-metal transition, which is unusual in a large-gap Mott insulator. Our results demonstrate the rich physics in a photo-doped Mott insulator that can be extracted from spatial-temporal imaging and showcase the capability of SUEM to sensitively probe photoexcitations in strongly correlated electron systems. Comment: Comments are welcome. Please email feedback to bliao@ucsb.edu
Databáze:	arXiv
Externí odkaz:	http://arxiv.org/abs/2406.07355 Zobrazit plný text záznamu View this record from Arxiv