| Autor: |
Buijtendorp, B. T., Endo, A., Jellema, W., Karatsu, K., Kouwenhoven, K., Lamers, D., van der Linden, A. J., Rostem, K., Veen, M., Wollack, E. J., Baselmans, J. J. A., Vollebregt, S. |
| Rok vydání: |
2024 |
| Předmět: |
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| Druh dokumentu: |
Working Paper |
| Popis: |
Low-loss deposited dielectrics are beneficial for the advancement of superconducting integrated circuits for astronomy. In the microwave band ($\mathrm{\sim}$1$\unicode{x2013}$10 GHz) the cryogenic and low-power dielectric loss is dominated by two-level systems. However, the origin of the loss in the millimeter-submillimeter band ($\mathrm{\sim}$0.1$\unicode{x2013}$1 THz) is not understood. We measured the loss of hydrogenated amorphous SiC (a-SiC:H) films in the 0.27$\unicode{x2013}$100 THz range using superconducting microstrip resonators and Fourier-transform spectroscopy. The agreement between the loss data and a Maxwell-Helmholtz-Drude dispersion model suggests that vibrational modes above 10 THz dominate the loss in the a-SiC:H above 200 GHz. |
| Databáze: |
arXiv |
| Externí odkaz: |
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