| Autor: |
Cakar, Efe, Ercan, H. Ekmel, Fuchs, Gordian, Denisov, Artem O., Anderson, Christopher R., Gyure, Mark F., Petta, Jason R. |
| Rok vydání: |
2024 |
| Předmět: |
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| Zdroj: |
Appl. Phys. Lett. 125, 143504 (2024) |
| Druh dokumentu: |
Working Paper |
| DOI: |
10.1063/5.0217704 |
| Popis: |
A detailed understanding of the material properties that affect the splitting between the two low-lying valley states in Si/SiGe heterostructures will be increasingly important as the number of spin qubits is increased. Scanning gate microscopy has been proposed as a method to measure the spatial variation of the valley splitting as a tip-induced dot is moved around in the plane of the Si quantum well. We develop a simulation using an electrostatic model of the scanning gate microscope tip and the overlapping gate structure combined with an approximate solution to the three-dimensional Schr\"odinger-Poisson equation in the device stack. Using this simulation, we show that a tip-induced quantum dot formed near source and drain electrodes can be adiabatically moved to a region far from the gate electrodes. We argue that by spatially translating the tip-induced dot across a defect in the Si/SiGe interface, changes in valley splitting can be detected. |
| Databáze: |
arXiv |
| Externí odkaz: |
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