Spin Hall Nano-Oscillator Empirical Electrical Model for Optimal On-chip Detector Design
Autor: | Fiorelli, Rafaella, Rajabali, Mona, Méndez-Romero, Roberto, Kumar, Akash, Litvinenko, Artem, Serrano-Gotarredona, Teresa, Moradi, Farshad, Åkerman, Johan, Linares-Barranco, Bernabé, Peralías, Eduardo |
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Rok vydání: | 2024 |
Předmět: | |
Zdroj: | IEEE Transactions on Electron Devices 2024 |
Druh dokumentu: | Working Paper |
DOI: | 10.1109/TED.2024.3410245 |
Popis: | As nascent nonlinear oscillators, nano-constriction spin Hall nano-oscillators (SHNOs) represent a promising potential for integration into more complicated systems such as neural networks, magnetic field sensors, and radio frequency (RF) signal classification, their tunable high-frequency operating regime, easy synchronization, and CMOS compatibility can streamline the process. To implement SHNOs in any of these networks, the electrical features of a single device are needed before designing the signal detection CMOS circuitry. This study centers on presenting an empirical electrical model of the SHNO based on a comprehensive characterization of the output impedance of a single SHNO, and its available output power in the range of 2-10 GHz at various bias currents. Comment: 6 pages |
Databáze: | arXiv |
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