Spin Hall Nano-Oscillator Empirical Electrical Model for Optimal On-chip Detector Design

Autor: Fiorelli, Rafaella, Rajabali, Mona, Méndez-Romero, Roberto, Kumar, Akash, Litvinenko, Artem, Serrano-Gotarredona, Teresa, Moradi, Farshad, Åkerman, Johan, Linares-Barranco, Bernabé, Peralías, Eduardo
Rok vydání: 2024
Předmět:
Zdroj: IEEE Transactions on Electron Devices 2024
Druh dokumentu: Working Paper
DOI: 10.1109/TED.2024.3410245
Popis: As nascent nonlinear oscillators, nano-constriction spin Hall nano-oscillators (SHNOs) represent a promising potential for integration into more complicated systems such as neural networks, magnetic field sensors, and radio frequency (RF) signal classification, their tunable high-frequency operating regime, easy synchronization, and CMOS compatibility can streamline the process. To implement SHNOs in any of these networks, the electrical features of a single device are needed before designing the signal detection CMOS circuitry. This study centers on presenting an empirical electrical model of the SHNO based on a comprehensive characterization of the output impedance of a single SHNO, and its available output power in the range of 2-10 GHz at various bias currents.
Comment: 6 pages
Databáze: arXiv