Achieving High Yield of Perpendicular SOT-MTJ Manufactured on 300 mm Wafers
| Autor: | Yang, Wenlong, Ji, Zhenghui, Gao, Yang, Zhou, Kaiyuan, Guo, Qijun, Zeng, Dinggui, Wang, Shasha, Wang, Ming, Shen, Lijie, Chen, Guilin, Sun, Yihui, Liu, Enlong, He, Shikun |
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| Rok vydání: | 2024 |
| Předmět: | |
| Druh dokumentu: | Working Paper |
| Popis: | The large-scale fabrication of three-terminal magnetic tunnel junctions (MTJs) with high yield is becoming increasingly crucial, especially with the growing interest in spin-orbit torque (SOT) magnetic random access memory (MRAM) as the next generation of MRAM technology. To achieve high yield and consistent device performance in MTJs with perpendicular magnetic anisotropy, an integration flow has been developed that incorporates special MTJ etching technique and other CMOS-compatible processes on a 300 mm wafer manufacturing platform. Systematic studies have been conducted on device performance and statistical uniformity, encompassing magnetic properties, electrical switching behavior, and reliability. Achievements include a switching current of 680 uA at 2 ns, a TMR as high as 119%, ultra-high endurance (over 1012 cycles), and excellent uniformity in the fabricated SOT-MTJ devices, with a yield of up to 99.6%. The proposed integration process, featuring high yield, is anticipated to streamline the mass production of SOT-MRAM. Comment: 8 pages, 5 figures |
| Databáze: | arXiv |
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