| Autor: |
Kang, Sueyeong, Petit, Matthieu, Heresanu, Vasile, Altié, Alexandre, Beaujard, Thomas, Bon, Ganaël, Cespedes, Oscar, Hickey, Brian, Michez, Lisa |
| Rok vydání: |
2024 |
| Předmět: |
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| Druh dokumentu: |
Working Paper |
| Popis: |
Structural and magnetic properties of Mn5(SixGe1-x)3 thin films were investigated. Ferromagnetic Mn5Ge3 and anti-ferromagnetic Mn5Si3 thin films have been synthesized and characterized as these compounds exhibit interesting features for the development of spintronics. Here, Mn5(SixGe1-x)3 thin films were grown on Ge(111) substrates by co-deposition using molecular beam epitaxy. Crystalline thin films can be produced with controlled Si concentrations ranging from 0 to 1. The thin films were relaxed by dislocations at the interface with the substrate. A lattice parameter variation was observed as the Si content increased, which is comparable to previous works done in bulk. Reflection highenergy electron diffraction diagrams and X-ray diffraction profiles showed that lattice parameters a and c are shrinking and that the surface roughness and crystallinity degrade as the Si amount increases. Magnetometric measurements revealed a ferromagnetic behavior for all Si concentrations. The measured average ferromagnetic moment per manganese atom decreased from 2.33 to 0.05 {\mu}B/Mn atom. No ferro to anti-ferromagnetic transition was observed contrary to the bulk Mn5(SixGe1-x)3 compound. |
| Databáze: |
arXiv |
| Externí odkaz: |
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