| Autor: |
Yu, Mingyu, Iddawela, Sahani Amaya, Wang, Jiayang, Hilse, Maria, Thompson, Jessica L., Hickey, Danielle Reifsnyder, Sinnott, Susan B, Law, Stephanie |
| Rok vydání: |
2024 |
| Předmět: |
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| Druh dokumentu: |
Working Paper |
| DOI: |
10.1021/acsnano.4c04194 |
| Popis: |
GaSe is an important member of the post-transition metal chalcogenide family and is an emerging two-dimensional (2D) semiconductor material. Because it is a van der Waals material, it can be fabricated into atomic-scale ultrathin films, making it suitable for the preparation of compact, heterostructure devices. In addition, GaSe possesses unusual optical and electronic properties, such as a shift from an indirect-bandgap single-layer film to a direct-bandgap bulk material, rare intrinsic p-type conduction, and nonlinear optical behaviors. These properties make GaSe an appealing candidate for the fabrication of field-effect transistors, photodetectors, and photovoltaics. However, the wafer-scale production of pure GaSe single crystal thin films remains challenging. This study develops an approach for the direct growth of nanometer-thick GaSe films on GaAs substrates using molecular beam epitaxy. It yields smooth thin GaSe films with the rare {\gamma}'-polymorph. We analyze the formation mechanism of {\gamma}'-GaSe using density functional theory and speculate that it is stabilized by Ga vacancies since the formation enthalpy of {\gamma}'-GaSe tends to become lower than that of other polymorphs when the Ga vacancy concentration increases. Finally, we investigate the growth conditions of GaSe, providing valuable insights for exploring 2D/3D quasi-van der Waals epitaxial growth. |
| Databáze: |
arXiv |
| Externí odkaz: |
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