Role of Coulomb interaction in the valley photogalvanic effect
| Autor: | Kovalev, V. M., Parafilo, A. V., Kibis, O. V., Savenko, I. G. |
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| Rok vydání: | 2024 |
| Předmět: | |
| Zdroj: | Phys. Rev. B 109, 245414 (2024) |
| Druh dokumentu: | Working Paper |
| DOI: | 10.1103/PhysRevB.109.245414 |
| Popis: | We develop a theory of Coulomb interaction-related contribution to the photogalvanic current of the carriers of charge in two-dimensional non-centrosymmetric Dirac materials possessing a nontrivial structure of valleys and exposed to an external electromagnetic field. The valley photogalvanic effect occurs here due to the trigonal warping of electrons and holes' dispersions in a given valley of the monolayer. We study the low-frequency limit of the external field: The field frequency is smaller than the temperature $T$, and the electron-electron and electron-hole scattering times are much larger than the electron-impurity and hole-impurity scattering times. In this regime, we employ the Boltzmann transport equations and show that electron-hole scattering dominates electron-electron scattering in intrinsic semiconductors. A Coulomb electron-hole interaction-related contribution to the valley photogalvanic current can reduce the value of the bare photogalvanic current as electron and hole currents flow in opposite directions. Comment: Published version |
| Databáze: | arXiv |
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