| Autor: |
Hinderling, M., Kate, S. C. ten, Coraiola, M., Haxell, D. Z., Stiefel, M., Mergenthaler, M., Paredes, S., Bedell, S. W., Sabonis, D., Nichele, F. |
| Rok vydání: |
2024 |
| Předmět: |
|
| Zdroj: |
PRX Quantum 5, 030357 (2024) |
| Druh dokumentu: |
Working Paper |
| DOI: |
10.1103/PRXQuantum.5.030357 |
| Popis: |
We demonstrate microwave measurements of the Andreev bound state (ABS) spectrum in planar Josephson junctions (JJs) defined in Ge high mobility two-dimensional hole gases contacted by superconducting PtSiGe. The JJs and readout circuitry are located on separate chips and inductively coupled via flip-chip bonding. For a device with $350~\mathrm{nm}$ junction length, spectroscopic signatures were consistent with the short-junction limit, with an induced superconducting gap $\Delta^{*}\approx48~\mathrm{\mu eV}$ and transmission $\tau \approx 0.94$. The interaction between the highest-transmission ABS and the resonator was well described by a Jaynes-Cummings model with a vacuum Rabi splitting of approximately $6~\mathrm{MHz}$. A device with junction length of $1~\mu m$ showed an ABS spectrum consistent with a long junction model. Time-resolved monitoring of the readout resonator in the dispersive regime revealed gate-voltage tunable junction parity fluctuations on the timescale of seconds. Our work indicates a viable path towards hybrid quantum devices based on planar Ge. |
| Databáze: |
arXiv |
| Externí odkaz: |
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