Extended Hubbard corrected tight-binding model for rhombohedral few-layer graphene
| Autor: | Lee, Dongkyu, Yang, Wooil, Son, Young-Woo, Jung, Jeil |
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| Rok vydání: | 2024 |
| Předmět: | |
| Druh dokumentu: | Working Paper |
| Popis: | Rhombohedral multilayer graphene (RnG) featuring partially flat bands has emerged as an important platform to probe strong Coulomb correlation effects. Theoretical consideration of local electron-electron interactions are of particular importance for electronic eigenstates with a tendency to spatially localize. We present a method to incorporate mean-field electron-electron interaction corrections in the tight-binding hopping parameters of the band Hamiltonian within the extended Hubbard model that incorporates ab initio estimates of on-site ($U$) and inter-site ($V$) Hubbard interactions for the $\pi$ bands of RnG. Our Coulomb-interaction renormalized band structures feature electron-hole asymmetry, band flatness, band gap, and anti-ferromagnetic ground states in excellent agreement with available experiments for $n \geq 4$. We reinterpret the putative gaps proposed in $n=3$ systems in terms of shifting electron and hole density of states peaks depending on the range of the Coulomb interaction models. Comment: 8 pages, 5 figures |
| Databáze: | arXiv |
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