| Autor: |
Aberl, Johannes, Navarrete, Enrique Prado, Karaman, Merve, Enriquez, Diego Haya, Wilflingseder, Christoph, Salomon, Andreas, Primetzhofer, Daniel, Schubert, Markus Andreas, Capellini, Giovanni, Fromherz, Thomas, Deák, Peter, Udvarhelyi, Péter, Song, Li, Gali, Ádám, Brehm, Moritz |
| Rok vydání: |
2024 |
| Předmět: |
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| Druh dokumentu: |
Working Paper |
| Popis: |
Silicon-based color-centers (SiCCs) have recently emerged as quantum-light sources that can be combined with telecom-range Si Photonics platforms. Unfortunately, using current SiCC fabrication, deterministic control over the vertical emitter position is impossible due to ion-implantation's stochastic nature. To overcome this bottleneck towards high-yield integration, we demonstrate a radically innovative creation method for various SiCCs, solely relying on epitaxial growth of Si and C-doped Si at atypically-low temperatures in a ultra-clean growth environment. These telecom emitters can be confined within sub-1nm thick layers embedded at arbitrary vertical positions within a highly crystalline Si matrix. Tuning growth conditions and doping, different SiCC types, e.g., W-centers, T-centers, G-centers, or derivatives like G'-centers can be created, which are particularly promising as Si-based single-photon sources and spin-photon interfaces. The zero-phonon emission from G'-centers can be conveniently tuned by the C-concentration, leading to a systematic wavelength shift and linewidth narrowing towards low emitter densities. |
| Databáze: |
arXiv |
| Externí odkaz: |
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