| Autor: |
Durand, Alrik, Baron, Yoann, Cache, Félix, Herzig, Tobias, Khoury, Mario, Pezzagna, Sébastien, Meijer, Jan, Hartmann, Jean-Michel, Reboh, Shay, Abbarchi, Marco, Robert-Philip, Isabelle, Gérard, Jean-Michel, Jacques, Vincent, Cassabois, Guillaume, Dréau, Anaïs |
| Rok vydání: |
2024 |
| Předmět: |
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| Zdroj: |
Physical Review B 110, 2 (2024) |
| Druh dokumentu: |
Working Paper |
| DOI: |
10.1103/PhysRevB.110.L020102 |
| Popis: |
Among the wide variety of single fluorescent defects investigated in silicon, numerous studies have focused on color centers with a zero-phonon line around $1.28 \mu$m and identified to a common carbon-complex in silicon, namely the G center. However, inconsistent estimates regarding their quantum efficiency cast doubt on the correct identification of these individual emitters. Through a comparative analysis of their single-photon emission properties, we demonstrate that these single color centers are split in two distinct families of point defects. A first family consists of the genuine single G centers with a well-identified microscopic structure and whose photoluminescence has been investigated on ensemble measurements since the 60's. The remaining defects belong to a new color center, which we will refer to as G$^{\star}$ center, whose atomic configuration has yet to be determined. These results provide a safeguard against future defect misidentifications, which is crucial for further development of quantum technologies relying on G or G$^{\star}$ center quantum properties. |
| Databáze: |
arXiv |
| Externí odkaz: |
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