| Autor: |
Talukder, A B M Hasan, Kashem, Md Tashfiq Bin, Khan, Raihan, Dirisaglik, Faruk, Gokirmak, Ali, Silva, Helena |
| Rok vydání: |
2024 |
| Předmět: |
|
| Druh dokumentu: |
Working Paper |
| Popis: |
We characterized resistance drift in phase change memory devices in the 80 K to 300 K temperature range by performing measurements on 20 nm thick, ~70-100 nm wide lateral Ge2Sb2Te5 (GST) line cells. The cells were amorphized using 1.5-2.5 V pulses with ~50-100 ns duration leading to ~0.4-1.1 mA peak reset currents resulting in amorphized lengths between ~50 and 700 nm. Resistance drift coefficients in the amorphized cells are calculated using constant voltage measurements starting as fast as within a second after amorphization and for 1 hour duration. Drift coefficients are in the range between ~0.02 and 0.1 with significant device-to-device variability and variations during the measurement period. At lower temperatures (higher resistance states) some devices show a complex dynamic behavior, with the resistance repeatedly increasing and decreasing significantly over periods in the order of seconds. |
| Databáze: |
arXiv |
| Externí odkaz: |
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