Spin-Dependent Capture Mechanism for Magnetic Field Effects on Interface Recombination Current in Semiconductor Devices

Autor:	Harmon, Nicholas J., Ashton, James P., Lenahan, Patrick M., Flatté, Michael E.
Rok vydání:	2023
Předmět:	Condensed Matter - Materials Science Condensed Matter - Mesoscale and Nanoscale Physics
Druh dokumentu:	Working Paper
Popis:	Electrically detected magnetic resonance (EDMR) and near-zero field magnetoresistance (NZFMR) are techniques that probe defect states at dielectric interfaces critical for metal-oxide-semiconductor (MOS) electronic devices such as the Si/SiO$_2$ MOS field effect transistor (MOSFET). A comprehensive theory, adapted from the trap-assisted recombination theory of Shockley, Read, and Hall, is introduced to include the spin-dependent recombination effects that provide the mechanism for magnetic field sensitivity. Comment: accepted in Applied Physics Letters. arXiv admin note: substantial text overlap with arXiv:2008.08121
Databáze:	arXiv
Externí odkaz:	http://arxiv.org/abs/2312.14933 Zobrazit plný text záznamu View this record from Arxiv