| Autor: |
Agrawal, Shivali, van Deurzen, Len, Encomendero, Jimy, Dill, Joseph E., Wei, Hsin, Huang, Protasenko, Vladimir, Huili, Xing, Jena, Debdeep |
| Rok vydání: |
2023 |
| Předmět: |
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| Druh dokumentu: |
Working Paper |
| Popis: |
Ultrawide bandgap heterojunction p-n diodes with polarization-induced AlGaN p-type layers are demonstrated using plasma-assisted molecular beam epitaxy on bulk AlN substrates. Current-voltage characteristics show a turn on voltage of $V_{\text{bi}}\approx5.5$ V, a minimum room temperature ideality factor of $\eta\approx 1.63$, and more than 12 orders of current modulation at room temperature. Stable current operation of the ultrawide bandgap semiconductor diode is measured up to a temperature of 300$^\circ$C. The one-sided n$^{+}$-p heterojunction diode design enables a direct measurement of the spatial distribution of polarization-induced mobile hole density in the graded AlGaN layer from the capacitance-voltage profile. The measured average mobile hole density is $p \sim 5.7 \times 10^{17}$ cm$^{-3}$, in close agreement with what is theoretically expected from distributed polarization doping. Light emission peaked at 260 nm (4.78 eV) observed in electroluminescence corresponds to interband radiative recombination in the n$^{+}$ AlGaN layer. A much weaker deep-level emission band observed at 3.4 eV is attributed to cation-vacancy and silicon complexes in the heavily Si-doped AlGaN layer. These results demonstrate that distributed polarization doping enables ultrawide bandgap semiconductor heterojunction p-n diodes that have wide applications ranging from power electronics to deep-ultraviolet photonics. These devices can operate at high temperatures and in harsh environments. |
| Databáze: |
arXiv |
| Externí odkaz: |
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