Challenges and Opportunities in Implementing Negative Differential Resistance Mode Reconfigurable Field Effect Transistors

Autor:	S, Lephe, S, Gifrin Fredik Raj, A, Abijesh Euphrine, S, Janaki, C, Jamina, L, Arun Jose
Rok vydání:	2023
Předmět:	Condensed Matter - Materials Science Condensed Matter - Disordered Systems and Neural Networks Physics - Applied Physics
Druh dokumentu:	Working Paper
Popis:	Desirably, the world relies on the devices being compact, as they could drive to the increased functionality of integrated circuits at the provided footstep, that is becoming more reliable. To reduce the scalability over the devices, approach has been outlined utilizing the NDR mode reconfigurable functionality over the transistors. Being an individual device efficient in exhibiting different task with the different configurations in the same physical circuitry. On the view of reconfigurable transistors, possibly authorize the reconfiguration from a p-type to n-type channel transistor has been expelled as an emerging application such as static memory cells, fast switching logic circuits as well as energy efficient computational multi valued logic. This article emphasizes NDR mode RFET along with its classification, followed by enhancing the RFET technology concepts and RFETs future potential has been discussed briefing with the growing applications like hardware security as well as neuro-inspired computing. Comment: 28 pages, 9 figures
Databáze:	arXiv
Externí odkaz:	http://arxiv.org/abs/2312.08351 Zobrazit plný text záznamu View this record from Arxiv