Development of travelling heater method for growth of detector grade CdZnTe single crystals

Autor: Vijayakumar, P., Sarguna, Edward Prabu Amaladass K. Ganesan R. M., Roy, Varsha, Ganesamoorthy, S.
Rok vydání: 2023
Předmět:
Zdroj: Materials Science in Semiconductor Processing 169 (2024) 107897
Druh dokumentu: Working Paper
DOI: 10.1016/j.mssp.2023.107897
Popis: We report on the indigenous design and development of laboratory scale travelling heater method (THM) system to grow detector grade Cd0.9Zn0.1Te (CdZnTe) single crystals. THM system mainly consists of two-zone furnace with a tuneable temperature gradient (30 - 80 C/cm), high precision translation (1 - 25 mm per day) and rotation (1 - 50 rpm) assemblies to meet the stringent conditions that are essential to grow detector grade CdZnTe single crystals. Further, a load cell in the THM system enables continuous monitoring of the growth. Systematic growth experiments were performed to optimize the various growth parameters in order to achieve large grain single crystals. Herein, the effect of temperature gradient and growth rate on the increase in grain size is discussed in detail. Each successful growth experiment yields a minimum of four detector grade elements of dimensions 10 x 10 x 5 mm3 from a starting charge of 100 g of CdZnTe. The crystalline nature and quality of the detector elements were evaluated using Laue, NIR transmission spectroscopy and I-V characteristics. Crystals with resistivity greater than ~ 1-10 giga-ohm-cm were identified for testing gamma ray detection. The photo peak of 137Cs was resolved with an energy resolution of 4.2 % at 662 keV and its measured electron mobility lifetime product is found to be ~ 3.3 x 10-3 cm2/V. The demonstration of the gamma ray detection with a relatively high {\mu}{\tau} product is the testimony to the successful growth of detector grade CdZnTe single crystals by an indigenously developed THM system.
Comment: 20 pages, 9 figures
Databáze: arXiv
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