Radiation effects on scientific CMOS sensors for X-ray astronomy: I. proton irradiation
| Autor: | Liu, Mingjun, Ling, Zhixing, Wu, Qinyu, Zhang, Chen, Liu, Jiaqiang, Zhang, Zhenlong, Yuan, Weimin, Zhang, Shuang-Nan |
|---|---|
| Rok vydání: | 2023 |
| Předmět: | |
| Druh dokumentu: | Working Paper |
| Popis: | Complementary metal-oxide-semiconductor (CMOS) sensors are a competitive choice for future X-ray astronomy missions. Typically, CMOS sensors on space astronomical telescopes are exposed to a high dose of irradiation. We investigate the impact of irradiation on the performance of two scientific CMOS (sCMOS) sensors between -30 to 20 degree at high gain mode (7.5 times), including the bias map, readout noise, dark current, conversion gain, and energy resolution. The two sensors are irradiated with 50 MeV protons with a total dose of 5.3*10^10 p/cm^2. After the exposure, the bias map, readout noise and conversion gain at various temperatures are not significantly degraded, nor is the energy resolution at -30 degree. However, after the exposure the dark current has increased by hundreds of times, and for every 20 degree increase in temperature, the dark current also increases by an order of magnitude. Therefore, at room temperature, the fluctuations of the dark currents dominate the noise and lead to a serious degradation of the energy resolution. Moreover, among the 4k * 4k pixels, there are about 100 pixels whose bias at 50 ms has changed by more than 10 DN (~18 e-), and about 10 pixels whose readout noise has increased by over 15 e- at -30 degree. Fortunately, the influence of the dark current can be reduced by decreasing the integration time, and the degraded pixels can be masked by regular analysis of the dark images. Some future X-ray missions will likely operate at -30 degree, under which the dark current is too small to significantly affect the X-ray performance. Our investigations show the high tolerance of the sCMOS sensors for proton radiation and prove their suitability for X-ray astronomy applications. Comment: accepted by JATIS |
| Databáze: | arXiv |
| Externí odkaz: |
|