Quantification of spin-charge interconversion in highly resistive sputtered Bi$_x$Se$_{1-x}$ with non-local spin valves
| Autor: | Arango, Isabel C., Choi, Won Young, Pham, Van Tuong, Groen, Inge, Vaz, Diogo C., Debashis, Punyashloka, Li, Hai, DC, Mahendra, Oguz, Kaan, Chuvilin, Andrey, Hueso, Luis E., Young, Ian A., Casanova, Fèlix |
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| Rok vydání: | 2023 |
| Předmět: | |
| Zdroj: | Physical Review B 108, 104425 (2023) |
| Druh dokumentu: | Working Paper |
| DOI: | 10.1103/PhysRevB.108.104425 |
| Popis: | The development of spin-orbitronic devices, such as magneto-electric spin-orbit logic devices, calls for materials with a high resistivity and a high spin-charge interconversion efficiency. One of the most promising candidates in this regard is sputtered Bi$_x$Se$_{1-x}$. Although there are several techniques to quantify spin-charge interconversion, to date reported values for sputtered Bi$_x$Se$_{1-x}$ have often been overestimated due to spurious effects related to local currents combined with a lack of understanding of the effect of the interfaces and the use of approximations for unknown parameters, such as the spin diffusion length. In the present study, non-local spin valves are used to inject pure spin currents into Bi$_x$Se$_{1-x}$, allowing us to directly obtain its spin diffusion length as well as its spin Hall angle, from 10 K up to 300 K. These values, which are more accurate than those previously reported in sputtered Bi$_x$Se$_{1-x}$, evidence that the efficiency of this material is not exceptional. Indeed, the figure of merit for spin-charge interconversion, given by the product of these two parameters, is slightly under 1 nm. Our work demonstrates the importance of considering all material parameters and interfaces when quantifying the spin transport properties of materials with strong spin-orbit coupling. Comment: 12 pages, 4 figures, 1 table, and Supplemental Material |
| Databáze: | arXiv |
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