| Autor: |
Zhao, W. X., Yang, M., Xu, R. Z., Du, X., Li, Y. D., Zhai, K. Y., Peng, C., Pei, D., Gao, H., Li, Y. W., Xu, L. X., Han, J. F., Huang, Y., Liu, Z. K., Yao, Y. G., Zhuang, J. C., Du, Y., Zhou, J. J., Chen, Y. L., Yang, L. X. |
| Rok vydání: |
2023 |
| Předmět: |
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| Druh dokumentu: |
Working Paper |
| Popis: |
The notion of topological insulators (TIs), characterized by an insulating bulk and conducting topological surface states, can be extended to higher-order topological insulators (HOTIs) hosting gapless modes localized at the boundaries of two or more dimensions lower than the insulating bulk1-5. In this work, by performing high-resolution angle-resolved photoemission spectroscopy (ARPES) measurements with submicron spatial and spin resolutions, we systematically investigate the electronic structure and spin texture of quasi-one-dimensional (1D) HOTI candidate Bi4Br4. In contrast to the bulk-state-dominant spectra on the (001) surface, we observe gapped surface states on the (100) surface, whose dispersion and spin-polarization agree well with our ab initio calculations. Moreover, we reveal in-gap states connecting the surface valence and conduction bands, which is an explicit signature of the existence of hinge states inside the (100) surface gap. Our findings provide compelling evidence for the HOTI phase of Bi4Br4. The identification of the higher-order topological phase will lay the promising prospect of applications based on 1D spin-momentum locked current in electronic and spintronic devices. |
| Databáze: |
arXiv |
| Externí odkaz: |
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