Al$_3$Sc thin films for advanced interconnect applications
| Autor: | Soulié, Jean-Philippe, Sankaran, Kiroubanand, Founta, Valeria, Opsomer, Karl, Detavernier, Christophe, Van de Vondel, Joris, Pourtois, Geoffrey, Tőkei, Zsolt, Swerts, Johan, Adelmann, Christoph |
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| Rok vydání: | 2023 |
| Předmět: | |
| Zdroj: | Microelectronic Engineering 286, 112141 (2024) |
| Druh dokumentu: | Working Paper |
| DOI: | 10.1016/j.mee.2024.112141 |
| Popis: | Al$_x$Sc$_{1-x}$ thin films have been studied with compositions around Al$_3$Sc ($x$ = 0.75) for potential interconnect metallization applications. As-deposited 25 nm thick films were x-ray amorphous but crystallized at 190{\deg}C, followed by recrystallization at 440{\deg}C. After annealing at 500{\deg}C, 24 nm thick stoichiometric Al$_3$Sc showed a resistivity of 12.6 $\mu\Omega$cm, limited by a combination of grain boundary and point defect (disorder) scattering. Together with ab initio calculations that found a mean free path of the charge carriers of 7 nm for stoichiometric Al$_3$Sc, these results indicate that Al$_3$Sc bears promise for future interconnect metallization schemes. Challenges remain in minimizing the formation of secondary phases as well as in the control of the non-stoichiometric surface oxidation and interfacial reactions with underlying dielectrics. Comment: 17 pages, 4 figures. Accepted version |
| Databáze: | arXiv |
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