Radiation Tolerance of SiGe BiCMOS Monolithic Silicon Pixel Detectors without Internal Gain Layer
| Autor: | Milanesio, M., Paolozzi, L., Moretti, T., Cardella, R., Kugathasan, T., Martinelli, F., Picardi, A., Semendyaev, I., Zambito, S., Nakamura, K., Tabuko, Y., Togawa, M., Elviretti, M., Rücker, H., Cadoux, F., Cardarelli, R., Débieux, S., Favre, Y., Fenoglio, C. A., Ferrere, D., Gonzalez-Sevilla, S., Iodice, L., Kotitsa, R., Magliocca, C., Nessi, M., Pizarro-Medina, A., Iglesias, J. Sabater, Saidi, J., Pinto, M. Vicente Barreto, Iacobucci, G. |
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| Rok vydání: | 2023 |
| Předmět: | |
| Druh dokumentu: | Working Paper |
| DOI: | 10.1088/1748-0221/19/01/P01014 |
| Popis: | A monolithic silicon pixel prototype produced for the MONOLITH ERC Advanced project was irradiated with 70 MeV protons up to a fluence of 1 x 10^16 1 MeV n_eq/cm^2. The ASIC contains a matrix of hexagonal pixels with 100 {\mu}m pitch, readout by low-noise and very fast SiGe HBT frontend electronics. Wafers with 50 {\mu}m thick epilayer with a resistivity of 350 {\Omega}cm were used to produce a fully depleted sensor. Laboratory tests conducted with a 90Sr source show that the detector works satisfactorily after irradiation. The signal-to-noise ratio is not seen to change up to fluence of 6 x 10^14 n_eq /cm^2 . The signal time jitter was estimated as the ratio between the voltage noise and the signal slope at threshold. At -35 {^\circ}C, sensor bias voltage of 200 V and frontend power consumption of 0.9 W/cm^2, the time jitter of the most-probable signal amplitude was estimated to be 21 ps for proton fluence up to 6 x 10 n_eq/cm^2 and 57 ps at 1 x 10^16 n_eq/cm^2 . Increasing the sensor bias to 250 V and the analog voltage of the preamplifier from 1.8 to 2.0 V provides a time jitter of 40 ps at 1 x 10^16 n_eq/cm^2. Comment: Submitted to JINST |
| Databáze: | arXiv |
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