Cavity enhanced emission from a silicon T center
| Autor: | Islam, Fariba, Lee, Chang-Min, Harper, Samuel, Rahaman, Mohammad Habibur, Zhao, Yuqi, Vij, Neelesh Kumar, Waks, Edo |
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| Rok vydání: | 2023 |
| Předmět: | |
| Zdroj: | Nano Lett. 2024, 24, 1, 319 |
| Druh dokumentu: | Working Paper |
| DOI: | 10.1021/acs.nanolett.3c04056 |
| Popis: | Silicon T centers present the promising possibility to generate optically active spin qubits in an all-silicon device. However, these color centers exhibit long excited state lifetimes and a low Debye-Waller factor, making them dim emitters with low efficiency into the zero-phonon line. Nanophotonic cavities can solve this problem by enhancing radiative emission into the zero-phonon line through the Purcell effect. In this work we demonstrate cavity-enhanced emission from a single T center in a nanophotonic cavity. We achieve a two-orders of magnitude increase in brightness of the zero-phonon line relative to waveguide-coupled emitters, a 23% collection efficiency from emitter to fiber, and an overall emission efficiency into the zero-phonon line of 63.4%. We also observe a lifetime enhancement of 5, corresponding to a Purcell factor exceeding 18 when correcting for the emission to the phonon sideband. These results pave the way towards efficient spin-photon interfaces in silicon photonics. Comment: References updated |
| Databáze: | arXiv |
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