Spectral stability of V2 centres in sub-micron 4H-SiC membranes
| Autor: | Heiler, Jonah, Körber, Jonathan, Hesselmeier, Erik, Kuna, Pierre, Stöhr, Rainer, Fuchs, Philipp, Ghezellou, Misagh, Ul-Hassan, Jawad, Knolle, Wolfgang, Becher, Christoph, Kaiser, Florian, Wrachtrup, Jörg |
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| Rok vydání: | 2023 |
| Předmět: | |
| Zdroj: | npj Quantum Mater. 9, 34 (2024) |
| Druh dokumentu: | Working Paper |
| DOI: | 10.1038/s41535-024-00644-4 |
| Popis: | Colour centres in silicon carbide emerge as a promising semiconductor quantum technology platform with excellent spin-optical coherences.However, recent efforts towards maximising the photonic efficiency via integration into nanophotonic structures proved to be challenging due to reduced spectral stabilities. Here, we provide a large-scale systematic investigation on silicon vacancy centres in thin silicon carbide membranes with thicknesses down to $0.25\,\rm\mu m$. Our membrane fabrication process involves a combination of chemical mechanical polishing, reactive ion etching, and subsequent annealing. This leads to highly reproducible membranes with roughness values of $3-4\,\rm\r{A}$, as well as negligible surface fluorescence. We find that silicon vacancy centres show close-to lifetime limited optical linewidths with almost no signs of spectral wandering down to membrane thicknesses of $0.7 \,\rm\mu m$. For silicon vacancy centres in thinner membranes down to $0.25\,\rm\mu m$, we observe spectral wandering, however, optical linewidths remain below $200\,\rm MHz$, which is compatible with spin-selective excitation schemes. Our work clearly shows that silicon vacancy centres can be integrated into sub-micron silicon carbide membranes, which opens the avenue towards obtaining the necessary improvements in photon extraction efficiency based on nanophotonic structuring. Comment: 10 pages, 4 figures, plus supplementary information |
| Databáze: | arXiv |
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