| Autor: |
Lassen, Henrik B., Kelleher, Edmund J. R., Iliushyn, Leonid, Booth, Timothy J., Bøggild, Peter, Jepsen, Peter U. |
| Rok vydání: |
2023 |
| Předmět: |
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| Druh dokumentu: |
Working Paper |
| Popis: |
The nanoscale contrast in scattering-type scanning near-field optical microscopy (s-SNOM) is determined by the optical properties of the sample immediately under the apex of the tip of the atomic force microscope (AFM). There are several models that describe the optical scattering of an incident field by the tip near a surface, and these models have been successful in relating the measured scattering signal to the dielectric function of the sample under the tip. Here, we address a situation that is normally not considered in the existing interaction models, namely the near-field signal arising from thin, highly conductive films in the terahertz (THz) frequency range. According to established theoretical models, highly conductive thin films should show insignificant contrast in the THz range for small variations in conductivity, therefore hindering the use of s-SNOM for nanoscale characterisation. We experimentally demonstrate unexpected but clear and quantifiable layer contrast in the THz s-SNOM signal from few-layer exfoliated graphene as well as subtle nanoscale contrast variations within graphene layers. We use finite-element simulations to confirm that the observed contrast is described by the classical electromagnetics of the scattering mechanism, suggesting that the dipole models must be reformulated to correctly describe the interaction with conductive samples. |
| Databáze: |
arXiv |
| Externí odkaz: |
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