Atomistic Control in Molecular Beam Epitaxy Growth of Intrinsic Magnetic Topological Insulator MnBi2Te4
| Autor: | Kim, Hyunsue, Liu, Mengke, Frammolino, Lisa, Li, Yanxing, Zhang, Fan, Lee, Woojoo, Dong, Chengye, Zhao, Yi-Fan, Chen, Guan-Yu, Hsu, Pin-Jui, Chang, Cui-Zu, Robinson, Joshua, Yan, Jiaqiang, Li, Xiaoqin, MacDonald, Allan H., Shih, Chih-Kang |
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| Rok vydání: | 2023 |
| Předmět: | |
| Druh dokumentu: | Working Paper |
| Popis: | Intrinsic magnetic topological insulators have emerged as a promising platform to study the interplay between topological surface states and ferromagnetism. This unique interplay can give rise to a variety of exotic quantum phenomena, including the quantum anomalous Hall effect and axion insulating states. Here, utilizing molecular beam epitaxy (MBE), we present a comprehensive study of the growth of high-quality MnBi2Te4 thin films on Si (111), epitaxial graphene, and highly ordered pyrolytic graphite substrates. By combining a suite of in-situ characterization techniques, we obtain critical insights into the atomic-level control of MnBi2Te4 epitaxial growth. First, we extract the free energy landscape for the epitaxial relationship as a function of the in-plane angular distribution. Then, by employing an optimized layer-by-layer growth, we determine the chemical potential and Dirac point of the thin film at different thicknesses. Overall, these results establish a foundation for understanding the growth dynamics of MnBi2Te4 and pave the way for the future applications of MBE in emerging topological quantum materials. Comment: 20 pages, 4 figures |
| Databáze: | arXiv |
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