Impact of electrostatic crosstalk on spin qubits in dense CMOS quantum dot arrays
| Autor: | Cifuentes, Jesus D., Tanttu, Tuomo, Steinacker, Paul, Serrano, Santiago, Hansen, Ingvild, Slack-Smith, James P., Gilbert, Will, Huang, Jonathan Y., Vahapoglu, Ensar, Leon, Ross C. C., Stuyck, Nard Dumoulin, Itoh, Kohei, Abrosimov, Nikolay, Pohl, Hans-Joachim, Thewalt, Michael, Laucht, Arne, Yang, Chih Hwan, Escott, Christopher C., Hudson, Fay E., Lim, Wee Han, Rahman, Rajib, Dzurak, Andrew S., Saraiva, Andre |
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| Rok vydání: | 2023 |
| Předmět: | |
| Druh dokumentu: | Working Paper |
| DOI: | 10.1103/PhysRevB.110.125414 |
| Popis: | Quantum processors based on integrated nanoscale silicon spin qubits are a promising platform for highly scalable quantum computation. Current CMOS spin qubit processors consist of dense gate arrays to define the quantum dots, making them susceptible to crosstalk from capacitive coupling between a dot and its neighbouring gates. Small but sizeable spin-orbit interactions can transfer this electrostatic crosstalk to the spin g-factors, creating a dependence of the Larmor frequency on the electric field created by gate electrodes positioned even tens of nanometers apart. By studying the Stark shift from tens of spin qubits measured in nine different CMOS devices, we developed a theoretical frawework that explains how electric fields couple to the spin of the electrons in increasingly complex arrays, including those electric fluctuations that limit qubit dephasing times $T_2^*$. The results will aid in the design of robust strategies to scale CMOS quantum technology. Comment: 9 pages, 4 figures |
| Databáze: | arXiv |
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