Electronic structure of the Ge/Si(105) hetero-interface
| Autor: | Sheverdyaeva, Polina M., Hogan, Conor, Sgarlata, Anna, Fazi, Laura, Fanfoni, Massimo, Persichetti, Luca, Moras, Paolo, Balzarotti, Adalberto |
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| Rok vydání: | 2023 |
| Předmět: | |
| Zdroj: | J. Phys.: Condens. Matter 30, 465502 (2018) |
| Druh dokumentu: | Working Paper |
| DOI: | 10.1088/1361-648X/aae66f |
| Popis: | Thin Ge layers deposited on Si(105) form a stable single-domain film structure with large terraces and rebonded-step surface termination, thus realizing an extended and ordered Ge/Si planar hetero-junction. At the coverage of four Ge monolayers angle-resolved photoemission spectroscopy reveals the presence of two-dimensional surface and film bands displaying energy-momentum dispersion compatible with the 5x4 periodicity of the system. The good agreement between experiment and first-principles electronic structure calculations confirms the validity of the rebonded-step structural model. The direct observation of surface features within 1 eV below the valence band maximum corroborates previously reported analysis of the electronic and optical behavior of the Ge/Si hetero-interface. Comment: 15 pages, 5 figures |
| Databáze: | arXiv |
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