| Autor: |
Syskaki, Maria-Andromachi, Dohi, Takaaki, Filnov, Sergei Olegovich, Kasatikov, Sergey Alexeyevich, Bednarz, Beatrice, Smekhova, Alevtina, Kronast, Florian, Bhukta, Mona, Pachat, Rohit, van der Jagt, Johannes Wilhelmus, Ono, Shimpei, Ramasitera, Dafiné Ravelosona, Langer, Jürgen, Kläui, Mathias, Diez, Liza Herrera, Jakob, Gerhard |
| Rok vydání: |
2023 |
| Předmět: |
|
| Druh dokumentu: |
Working Paper |
| Popis: |
The electric-field control of magnetism is a highly promising and potentially effective approach for achieving energy-efficient applications. In recent times, there has been significant interest in the magneto-ionic effect in synthetic antiferromagnets, primarily due to its strong potential in the realization of high-density storage devices with ultra-low power consumption. However, the underlying mechanism responsible for the magneto-ionic effect on the interlayer exchange coupling (IEC) remains elusive. In this study, we have successfully identified that the magneto-ionic control of the properties of the top ferromagnetic layer of the synthetic antiferromagnet (SyAFM), which is in contact with the high ion mobility oxide, plays a pivotal role in driving the observed gate-induced changes to the IEC. Our findings provide crucial insights into the intricate interplay between stack structure and magnetoionic-field effect on magnetic properties in synthetic antiferromagnetic thin film systems. |
| Databáze: |
arXiv |
| Externí odkaz: |
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