Effect of geometry on the frequency limit of GaAs/AlGaAs 2-Dimensional Electron Gas (2DEG) Hall effect sensors

Autor:	Lalwani, Anand, Giparakis, Miriam, Arora, Kanika, Maharaj, Avidesh, Levy, Akash, Strasser, Gottfried, Andrews, Aaron Maxwell, Köck, Helmut, Senesky, Debbie G.
Rok vydání:	2023
Předmět:	Physics - Instrumentation and Detectors Condensed Matter - Mesoscale and Nanoscale Physics Electrical Engineering and Systems Science - Signal Processing
Druh dokumentu:	Working Paper
Popis:	In this work, we experimentally investigate the frequency limit of Hall effect sensor designs based on a 2 dimensional electron gas (2DEG) gallium arsenide/aluminum gallium arsenide (GaAs/AlGaAs) heterostructure. The frequency limit is measured and compared for four GaAs/AlGaAs Hall effect sensor designs where the Ohmic contact length (contact geometry) is varied across the four devices. By varying the geometry, the trade-off in sensitivity and frequency limit is explored and the underlying causes of the frequency limit from the resistance and capacitance perspective is investigated. Current spinning, the traditional method to remove offset noise, imposes a practical frequency limit on Hall effect sensors. The frequency limit of the Hall effect sensor, without current spinning, is significantly higher. Wide-frequency Hall effect sensors can measure currents in power electronics that operate at higher frequencies is one such application. Comment: Hall effect sensors, magnetic sensing, frequency limit, 2DEGs
Databáze:	arXiv
Externí odkaz:	http://arxiv.org/abs/2306.07474 Zobrazit plný text záznamu View this record from Arxiv