A Generalizable TCAD Framework for Silicon FinFET Spin Qubit Devices with Electrical Control
| Autor: | Ding, Qian, Kuhlmann, Andreas V., Fuhrer, Andreas, Schenk, Andreas |
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| Rok vydání: | 2023 |
| Předmět: | |
| Zdroj: | Solid-State Electronics 200 (2023) 108550 |
| Druh dokumentu: | Working Paper |
| DOI: | 10.1016/j.sse.2022.108550 |
| Popis: | We present a TCAD-based simulation framework established for quantum dot spin qubits in a silicon FinFET platform with all-electrical control of the spin state. The framework works down to 1K and consists of a two-step simulation chain, from definition of the quantum dot confinement potential with DC bias voltages, to calculation of microwave response electric field at qubit locations using small-signal AC analysis. An average field polarization vector at each quantum dot is extracted via a post-processing step. We demonstrate functionality of this approach by simulation of a recently reported two-qubit device in the form of a 5-gate silicon FinFET. The impact of the number of holes in each quantum dot on the MW response E-field polarization direction is further investigated for this device. The framework is easily generalizable to study future multi-qubit large-scale systems. Comment: 4 pages, 6 figures, submitted to conference SISPAD 2022 |
| Databáze: | arXiv |
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