| Autor: |
Matsumoto, Rie, Yuasa, Shiniji, Imamura, Hiroshi |
| Rok vydání: |
2023 |
| Předmět: |
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| Druh dokumentu: |
Working Paper |
| DOI: |
10.1016/j.jmmm.2023.170804 |
| Popis: |
Voltage-controlled magnetoresistive random access memory (VC-MRAM) based on voltage-induced dynamic switching in magnetic tunnel junctions (MTJs) is a promising ultimate non-volatile memory with ultralow power consumption. However, the dynamic switching in a conventional MTJ is accompanied by a relatively high write error rate (WER), hindering the reliable operation of VC-MRAM. Here, we propose a reliable writing scheme using the in-plane demagnetizing field (IDF) and voltage-induced negative out-of-plane anisotropy field (NOAF). Numerical simulations based on macrospin model demonstrate that the voltage-induced NOAF modifies the switching dynamics and increases the torque due to the IDF, thereby reducing the switching time. The IDF and voltage-induced NOAF also reduce the mean energy difference between the magnetization direction at the end of the pulse and the equilibrium direction. As a result, an appropriate combination of the IDF and voltage-induced NOAF reduces the WER by one order of magnitude compared with that of the dynamic switching in a conventional MTJ. |
| Databáze: |
arXiv |
| Externí odkaz: |
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