Electric field induced Mott-insulator to metal transition and memristive behaviour in epitaxial V$_2$O$_3$ thin film
| Autor: | De, Binoy Krishna, Sathe, V. G., Roy, S. B. |
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| Rok vydání: | 2023 |
| Předmět: | |
| Zdroj: | Journal of Electronic Materials, July, 2024 (published online on July 12, 2024) |
| Druh dokumentu: | Working Paper |
| DOI: | 10.1007/s11664-024-11286-4 |
| Popis: | We report an isothermal electric field-induced first-order phase transition from Mott-insulator to the metallic state in the epitaxial thin film of V$_2$O$_3$ in the temperature regime below its Mott transition temperature $\approx$ 180 K. This isothermal electric field induced transition is accompanied by interesting electro-thermal history effects, which depend on the measurement paths followed in the electric field - temperature phase space. These interesting properties result in tuneable resistive switching and distinct memristive behavior in V$_2$O$_3$. A generalized framework of disorder-influenced first-order phase transition in combination with a resistor network model has been used to explain the observed experimental features. These findings promise possibilities for Mott insulators to be highly energy-efficient switches in novel technologies like neuromorphic computing. Comment: 8 pages, 8 figures |
| Databáze: | arXiv |
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