| Autor: |
Wang, Rui, Liu, Quan, Dai, Sheng, Liu, Chao-Ming, Liu, Yue, Sun, Zhao-Yuan, Li, Hui, Zhang, Chang-Jin, Wang, Han, Xu, Cheng-Yan, Shao, Wen-Zhu, Meixner, Alfred J., Zhang, Dai, Li, Yang, Zhen, Liang |
| Rok vydání: |
2023 |
| Předmět: |
|
| Druh dokumentu: |
Working Paper |
| Popis: |
Defect engineering is promising to tailor the physical properties of two-dimensional (2D) semiconductors for function-oriented electronics and optoelectronics. Compared with the extensively studied 2D binary materials, the origin of defects and their influence on physical properties of 2D ternary semiconductors have not been clarified. In this work, we thoroughly studied the effect of defects on the electronic structure and optical properties of few-layer hexagonal Znln2S4 via versatile spectroscopic tools in combination with theoretical calculations. It has been demonstrated that the Zn-In anti-structural defects induce the formation of a series of donor and acceptor levels inside the bandgap, leading to rich recombination paths for defect emission and extrinsic absorption. Impressively, the emission of donor-acceptor pair (DAP) in Znln2S4 can be significantly tailored by electrostatic gating due to efficient tunability of Fermi level (Ef). Furthermore, the layer-dependent dipole orientation of defect emission in Znln2S4 was directly revealed by back focal plane (BFP) imagining, where it presents obviously in-plane dipole orientation within a dozen layers thickness of Znln2S4. These unique features of defects in Znln2S4 including extrinsic absorption, rich recombination paths, gate tunability and in-plane dipole orientation will definitely benefit to the advanced orientation-functional optoelectronic applications. |
| Databáze: |
arXiv |
| Externí odkaz: |
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