Development of Nb-GaAs based superconductor semiconductor hybrid platform by combining in-situ dc magnetron sputtering and molecular beam epitaxy
| Autor: | Todt, Clemens, Telkamp, Sjoerd, Krizek, Filip, Reichl, Christian, Gabureac, Mihai, Schott, Rüdiger, Cheah, Erik, Zeng, Peng, Weber, Thomas, Müller, Arnold, Vockenhuber, Christof, Panah, Mohsen Bahrami, Wegscheider, Werner |
|---|---|
| Rok vydání: | 2023 |
| Předmět: | |
| Druh dokumentu: | Working Paper |
| Popis: | We present Nb thin films deposited in-situ on GaAs by combining molecular beam epitaxy and magnetron sputtering within an ultra-high vacuum cluster. Nb films deposited at varying power, and a reference film from a commercial system, are compared. The results show clear variation between the in-situ and ex-situ deposition which we relate to differences in magnetron sputtering conditions and chamber geometry. The Nb films have critical temperatures of around $9 \textrm{K}$. and critical perpendicular magnetic fields of up to $B_{c2} = 1.4 \textrm{T}$ at $4.2 \textrm{K}$. From STEM images of the GaAs-Nb interface we find the formation of an amorphous interlayer between the GaAs and the Nb for both the ex-situ and in-situ deposited material. Comment: 12 pages paper, 9 pages supplementary, 6 figures paper, 7 figures supplementary |
| Databáze: | arXiv |
| Externí odkaz: |
|