Fine-structure transitions of Si and S induced by collisions with atomic hydrogen
Autor: | Yan, Pei-Gen, Babb, James F. |
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Rok vydání: | 2023 |
Předmět: | |
Druh dokumentu: | Working Paper |
DOI: | 10.1093/mnras/stad1050 |
Popis: | Using a quantum-mechanical close-coupling method, we calculate cross sections for fine structure excitation and relaxation of Si and S atoms in collisions with atomic hydrogen. Rate coefficients are calculated over a range of temperatures for astrophysical applications. We determine the temperature-dependent critical densities for the relaxation of Si and S in collisions with H and compare these to the critical densities for collisions with electrons. The present calculation should be useful in modeling environments exhibiting the [S i] 25 {\mu}m and [S i] 57 {\mu}m far-infrared emission lines or where cooling of S and Si by collisions with H are of interest. Comment: Updated table 2 |
Databáze: | arXiv |
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