Fine-structure transitions of Si and S induced by collisions with atomic hydrogen

Autor:	Yan, Pei-Gen, Babb, James F.
Rok vydání:	2023
Předmět:	Physics - Atomic Physics Astrophysics - Cosmology and Nongalactic Astrophysics
Druh dokumentu:	Working Paper
DOI:	10.1093/mnras/stad1050
Popis:	Using a quantum-mechanical close-coupling method, we calculate cross sections for fine structure excitation and relaxation of Si and S atoms in collisions with atomic hydrogen. Rate coefficients are calculated over a range of temperatures for astrophysical applications. We determine the temperature-dependent critical densities for the relaxation of Si and S in collisions with H and compare these to the critical densities for collisions with electrons. The present calculation should be useful in modeling environments exhibiting the [S i] 25 {\mu}m and [S i] 57 {\mu}m far-infrared emission lines or where cooling of S and Si by collisions with H are of interest. Comment: Updated table 2
Databáze:	arXiv
Externí odkaz:	http://arxiv.org/abs/2304.02727 Zobrazit plný text záznamu View this record from Arxiv